Statistical optimization of high frequency LDMOS devices via hyper-fractionated experimental designs

R. Elias, G. Ma, L. Golonka
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引用次数: 1

Abstract

Advanced statistical techniques are utilized to develop a multivariable device characterization of a submicron, two gigahertz laterally diffused metal oxide semiconductor (LDMOS) transistor. A twelve variable, 1/128th fractional factorial of resolution class IV is designed and executed to characterize this device in terms of threshold voltage, contact resistance, and leakages. The Motorola "10/spl times/" Product Development Initiative is presented and the contribution of hyper-fractionated experimental designs to this and other "time to market" challenges is discussed.
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基于超分馏实验设计的高频LDMOS器件统计优化
利用先进的统计技术开发了亚微米,2ghz横向扩散金属氧化物半导体(LDMOS)晶体管的多变量器件表征。一个12变量,1/128分数阶乘的分辨率等级IV被设计和执行,以表征该器件的阈值电压,接触电阻和泄漏。介绍了摩托罗拉“10/spl次/”产品开发计划,并讨论了超分馏实验设计对这一挑战和其他“上市时间”挑战的贡献。
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