MOSFETs Selection in Front-end Active Bridge Rectifier

Domenico Nardo, M. Cacciato, G. Belverde, S. Rizzo, G. Scarcella, R. Scollo, Alfio Scuto, G. Sorrentino
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Abstract

This paper provides some guidelines for the selection of SuperJunction MOSFETs in active rectification of the input AC voltage. It starts with an evaluation of the gain in terms of power efficiency with respect to the traditional diode rectification bridge. Then, a selection guide of the active device is made, based on the device’s datasheet, to highlight the key parameters for a MOSFET and link these parameters to their impact on the converter. At the end, a critical aspect of the active bridge is analyzed, that is the inrush current phenomenon, and occurs each time the converter is activated. This particular working condition is analyzed both electrically and thermally, to show the capability to handle these phenomena by a SuperJunction MOSFET.
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前端有源桥式整流器中mosfet的选择
本文为输入交流电压主动整流中超结mosfet的选择提供了一些指导。它首先从功率效率的角度评估增益,相对于传统二极管整流桥。然后,根据器件的数据表,制作有源器件的选择指南,以突出MOSFET的关键参数,并将这些参数与它们对转换器的影响联系起来。最后,分析了有源电桥的一个重要方面,即每次激活时都会产生的涌流现象。对这种特殊的工作条件进行了电学和热分析,以显示超级结MOSFET处理这些现象的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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