A. Gutkin, M. Reshchikov, V. Sedov, V.R. Sosnovskii
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引用次数: 0
Abstract
We have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the V/sub Ga/Te/sub As/, V/sub Ga/Sn/sub Ga/ and V/sub Ga/Si/sub Ga/ complexes responsible for the 1.2 eV PL band and the Cu/sub Ga/Te/sub As/, Cu/sub Ga/S/sub As/ and Cu/sub Ga/Se/sub As/ complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature.
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