Z. Zhao, A. Schwagmann, F. Ospald, K. Klitzing, J. Smet, D. Driscoll, M. Hanson, Hong Lu, A. Gossard
{"title":"1.55 μm photoconductive THz emitters based on ErAs:In0.53Ga0.47As superlattices","authors":"Z. Zhao, A. Schwagmann, F. Ospald, K. Klitzing, J. Smet, D. Driscoll, M. Hanson, Hong Lu, A. Gossard","doi":"10.1109/PHOTWTM.2010.5421971","DOIUrl":null,"url":null,"abstract":"ErAs:In0.53Ga0.47As superlattice THz emitters are fabricated and characterized at an excitation wavelength of 1.55 µm. Photocurrent-voltage characteristics, carrier lifetimes and bandwidth of the THz output are discussed as a function of the superlattice period.","PeriodicalId":367324,"journal":{"name":"2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOTWTM.2010.5421971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
ErAs:In0.53Ga0.47As superlattice THz emitters are fabricated and characterized at an excitation wavelength of 1.55 µm. Photocurrent-voltage characteristics, carrier lifetimes and bandwidth of the THz output are discussed as a function of the superlattice period.