Yang Li, Z. Ye, Chun Lin, Xiao-ning Hu, R. Ding, Li He
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引用次数: 0
Abstract
Current-voltage (I-V) characteristics of HgCdTe photodiodes in the forward bias region have been modeled on account of mechanisms including diffusion and recombination currents, metal-semiconductor (M-S) contact and constant series resistance. Moreover, a data processing approach has been developed to obtain valuable physical parameters from measured I-V curves. This model and algorithm have also been verified to be available and promising by the fitting results on device parameters of HgCdTe photodiodes.
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