FDTD analysis of distributed amplifiers based on the fully distributed model

R. Mirzavand, A. Abdipour, A. A. Shishegar
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引用次数: 1

Abstract

In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.
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基于全分布模型的分布式放大器时域有限差分分析
本文采用波的方法来研究分布式放大器的性能。利用全分布模型得到了场效应管的时域响应。通过将该方法应用于pigate GaAs MESFET,从2-20 GHz频率范围内的时域结果计算出S矩阵。通过三维时域有限差分仿真提取栅极线和漏极线的散射参数。将该方法与设备集总模型和传输线的准静态方法进行了比较。
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