A. Pacheco-Sánchez, M. Enciso-Aguilar, L. Rodriguez-Mendez, E. Ramírez-García
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Abstract
In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
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