CNT and SiNW modeling for dual-gate ambipolar logic circuit design

Abstract

The book chapter surveys available FED models and analyzes the utility of these device models for ambipolar logic circuit design to enable the reader to determine which model is best suited for a particular application. The models have been grouped according to their underlying approaches and their ability to perform the desired model characteristics. Where the group names do not specify otherwise, these groups are static with fixed drain and source nodes.