Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, K. Averett, J. Albrecht, C.C. Yang
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引用次数: 0
Abstract
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
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