G. Crupi, Z. Marinković, D. Schreurs, V. Markovic, A. Caddemi
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引用次数: 1
Abstract
We report on the characterization and modelling of a microwave MOSFET. We have characterized the tested on-wafer transistor by measuring DC characteristics and multi-bias scattering parameters up to 40 GHz. Furthermore, we have analytically extracted a small-signal equivalent circuit model that has been extensively and successfully validated against experimental data.
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