Measurement and Modeling of GaAs Based Nano-pHEMT: Small Signal to Large Signal Analysis

Md. Shamsul Alam, M. Alim, A. Rezazadeh
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Abstract

In this paper, GaAs-based nano-pHEMT has been measured and modeled using small signal and large signal analysis. Three distinct simulation methods have been used for DC characterization, and the results have been compared with measurements. Two separate simulation methods have been used for RF characterization, and the results have been verified with measurements. It is shown that the simulated findings accurately reflect the measured values. Additionally, it was found that both the large and small signal models-are agreed with the measured data up to 22 GHz at the same biasing point. The simulation and measurement findings are differed with less than 10%, demonstrating that the modeling procedures were accurate.
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基于砷化镓的纳米phemt的测量和建模:小信号到大信号的分析
本文采用小信号和大信号分析对gaas基纳米phemt进行了测量和建模。三种不同的模拟方法用于直流表征,并将结果与测量结果进行了比较。两种独立的仿真方法已被用于射频表征,结果已通过测量验证。结果表明,模拟结果准确地反映了实测值。此外,在相同的偏置点,大信号和小信号模型都与22ghz以内的实测数据一致。模拟结果与实测结果的误差小于10%,表明建模过程是准确的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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