Mehdi Nasrollahpour, Alexei D. Matyushov, Mohsen Zaeimbashi, N. Sun
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引用次数: 1
Abstract
This paper presents a miniaturized complementary-metal-oxide-semiconductor (CMOS) oscillator using microelectromechanical system (MEMS) resonating at 159 MHz frequency. The CMOS circuit is designed and simulated in 0.35,..,m XFAB technology. The fabricated magnetoelectric (ME) sensor offers quality factor of 653. The proposed oscillator provides a phase noise as low as -131.3 dBc/Hz at 10kHz and -137.9 dBc/Hz at 100 kHz offset frequencies while consuming 2.24 mW power.
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