A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication

B. Huang, Z. Fu, Kun-You Lin
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Abstract

A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25.1 dBm and a peak power-added efficiency $(\text{PAE}_{\max})$ of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB Psat bandwidth are 75% and 51%, respectively.
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用于5G通信的0.15 μm GaAs pHEMT毫米波超宽带功率放大器
提出了一种采用0.15 μm GaAs pHEMT工艺制作的毫米波超宽带功率放大器。采用等效磁耦合谐振器(MCR)来获得宽带功率性能。为实现宽带小信号响应,设计了小信号增益平坦化的输入级间匹配网络。该放大器的饱和输出功率(Psat)为25.1 dBm,峰值功率附加效率$(\text{PAE}_{\max})$为33.6%。3db小信号带宽为75%,1db Psat带宽为51%。
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