{"title":"A low noise amplifier with on-chip matching network and integrated bulk Acoustic Wave resonators for high image rejection","authors":"M. Dielacher, Martin Flatscher, W. Pribyl","doi":"10.1109/RME.2009.5201313","DOIUrl":null,"url":null,"abstract":"This paper presents a 2.45 GHz low noise amplifier (LNA), built in a 0.13 µm CMOS process. It has an on-chip matching network and contains integrated bulk acoustic wave (BAW) resonators for narrow-band filtering at RF. The voltage gain of LNA and matching network is 31.5 dB with 4.7 dB noise figure (NF) at a current consumption of 2 mA.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2009.5201313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a 2.45 GHz low noise amplifier (LNA), built in a 0.13 µm CMOS process. It has an on-chip matching network and contains integrated bulk acoustic wave (BAW) resonators for narrow-band filtering at RF. The voltage gain of LNA and matching network is 31.5 dB with 4.7 dB noise figure (NF) at a current consumption of 2 mA.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
