Determination of Defects in Planar CH3NH3PbI3 Perovskite Solar Cells Using a SCAPS-1D Simulation Tool

N. D. Cuong, Vu Thi Thao, Nguyen Tuan Canh, Nguyen Phuong Hoai Nam, Nguyen Nang Dinh
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Abstract

In this work, electrical simulations of planar CH3NH3PbI3 solar cells using a SCAPS-1D (a Solar Cell Capacitance Simulator) simulation tool were performed to determine the density of defects based on the performance parameters and J-V characteristics of actual experimental planar CH3NH3PbI3 solar cells. Two types of defects (bulk and interface) were introduced into the simulation model. The densities of those defects were found by fitting the J-V characteristics and performance parameters including , , and FF to the experimental data. The methods and results reported in this paper showed a close relationship between the parameters of defects in planar perovskite solar cells.      
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基于SCAPS-1D模拟工具的平面CH3NH3PbI3钙钛矿太阳能电池缺陷测定
本文利用SCAPS-1D (solar Cell capacitysimulator)仿真工具对平面CH3NH3PbI3太阳能电池进行电学仿真,根据实际实验平面CH3NH3PbI3太阳能电池的性能参数和J-V特性确定缺陷密度。在仿真模型中引入了两类缺陷(本体缺陷和界面缺陷)。通过将J-V特性和性能参数(包括、、和FF)拟合到实验数据中,得到了这些缺陷的密度。本文所报道的方法和结果表明,平面钙钛矿太阳能电池中缺陷的参数之间有密切的关系。
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