{"title":"Magneto-optical enhancement in highly Poly-crystallized Ce substituted YIG thin films by PLD","authors":"Y. Zhang, Jianliang Xie, L. Deng, L. Bi","doi":"10.1109/INEC.2016.7589375","DOIUrl":null,"url":null,"abstract":"In this study, we used combinatorial pulsed laser deposition (PLD) method to deposit Ce:YIG thin films with high Ce concentration on silicon. Thin films with record high Ce concentrations of Ce<sub>1.3</sub>Y<sub>1.7</sub>Fe<sub>5</sub>O<sub>12</sub> were successfully grown on silicon, which showed about 3 fold enhancement of the Kerr rotation at 635 nm wavelength compared to previously reported Ce<sub>1</sub>Y<sub>2</sub>Fe<sub>5</sub>O<sub>12</sub>. Ce<sub>x</sub>Y<sub>3-x</sub>Fe<sub>5</sub>O<sub>12</sub> films with Ce concentration varying from 0.8 to x 1.4 were deposited on polycrystalline YIG thin film (60 nm) buffered Si substrates by PLD.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"25 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we used combinatorial pulsed laser deposition (PLD) method to deposit Ce:YIG thin films with high Ce concentration on silicon. Thin films with record high Ce concentrations of Ce1.3Y1.7Fe5O12 were successfully grown on silicon, which showed about 3 fold enhancement of the Kerr rotation at 635 nm wavelength compared to previously reported Ce1Y2Fe5O12. CexY3-xFe5O12 films with Ce concentration varying from 0.8 to x 1.4 were deposited on polycrystalline YIG thin film (60 nm) buffered Si substrates by PLD.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
