Aluminum doped silica preform fabrication using MCVD and solution doping technique: Effects of various aluminum solution concentrations

S. M. Aljamimi, Z. Yusoff, H. Abdul-Rashid, M. S. Khairul Anuar, S. Z. Muhd-Yasin, M. I. Zulkifli, S. Hanif, N. Tamchek
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引用次数: 1

Abstract

This work is described for solution doping in Modified Chemical Vapor Deposition (MCVD) used for silica optical fiber fabrication. This paper will concentrate on aluminum solution doping and the effect of different solution concentrations. The effect of three different concentrations of aluminum (0.3M,0.7M and 1.2M) with the soot undergo heat treatment are studied while the other parameters of MCVD and solution doping are fixed such as deposition temperature, SiCl4 flow, and soaking time. The refractive index profile(RIP) of each doped preform is measured using preform analyzer to investigate aluminum distribution in the core region. Further investigation about Al distribution across the core sintered layer is also examined by EDX techniques.
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用MCVD和溶液掺杂技术制备铝掺杂二氧化硅预制体:不同铝溶液浓度的影响
本文介绍了改性化学气相沉积法(MCVD)制备二氧化硅光纤的溶液掺杂方法。本文将重点研究铝溶液的掺杂以及不同溶液浓度的影响。研究了三种不同浓度的铝(0.3M、0.7M和1.2M)对热处理烟尘的影响,同时确定了MCVD和溶液掺杂的其他参数,如沉积温度、SiCl4流量和浸泡时间。利用预成形分析仪测量了各掺杂预成形的折射率分布,研究了铝在核心区的分布。利用EDX技术进一步研究了铝在核心烧结层中的分布。
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