Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

M. Nadir
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Abstract

A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.
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基于GaInNAs-GaAs多量子阱的垂直腔面发射激光器模拟
基于N掺杂和p掺杂Al/sub 0.143/Ga/sub 0.857/As和AlAs,模拟了具有分布式Bragg反射镜(DBR)的Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y/ GaAs多量子阱激光器。通过改变VCSEL的结构(下圆柱体部分的直径),可以观察到电流分布的变化。在不同的N组成下,计算了光学增益对实折射率变化的影响。本工作采用自洽建模软件PICS3D[PICS3D]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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