A fully-integrated CAD infrastructure for the design, optimization and virtual manufacturing of discrete and integrable power semiconductor devices and circuits
{"title":"A fully-integrated CAD infrastructure for the design, optimization and virtual manufacturing of discrete and integrable power semiconductor devices and circuits","authors":"K. Shenai","doi":"10.1109/CIPE.1994.396742","DOIUrl":null,"url":null,"abstract":"This paper presents a virtual wafer fabrication infrastructure suitable for power semiconductor development and manufacturing. In the framework, advanced 2D-process and device simulators are interfaced. Mixed-mode circuit simulation is used in which semiconductor device carrier dynamics are optimized in an actual circuit application environment. The results of the circuit simulation are used to develop an optimum device for a given application by carefully trading the process, device, and circuit performance and reliability parameters. The use of this approach is illustrated using the design and optimization of IGBTs in resonant power converter applications.<<ETX>>","PeriodicalId":123138,"journal":{"name":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE Workshop on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1994.396742","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a virtual wafer fabrication infrastructure suitable for power semiconductor development and manufacturing. In the framework, advanced 2D-process and device simulators are interfaced. Mixed-mode circuit simulation is used in which semiconductor device carrier dynamics are optimized in an actual circuit application environment. The results of the circuit simulation are used to develop an optimum device for a given application by carefully trading the process, device, and circuit performance and reliability parameters. The use of this approach is illustrated using the design and optimization of IGBTs in resonant power converter applications.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
