P. Binetti, X. Leijtens, A. Morant Ripoll, T. de Vries, E. Smalbrugge, Y. Oei, L. Di Cioccio, J. Fédéli, C. Lagahe, R. Orobtchouk, D. van Thourhout, P. J. van Veldhoven, R. Notzel, M. Smit
{"title":"InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides","authors":"P. Binetti, X. Leijtens, A. Morant Ripoll, T. de Vries, E. Smalbrugge, Y. Oei, L. Di Cioccio, J. Fédéli, C. Lagahe, R. Orobtchouk, D. van Thourhout, P. J. van Veldhoven, R. Notzel, M. Smit","doi":"10.1109/LEOS.2009.5343085","DOIUrl":null,"url":null,"abstract":"We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper.
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