An active substrate driver for mixed-voltage SOI systems on a chip

S. Jackson, B. Blalock, M. Mojarradi, H.W. Li
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Abstract

High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and "shorts-out" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.
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芯片上混合电压SOI系统的有源衬底驱动器
SOI中的高压晶体管与传统的低压晶体管共存,使得混合电压(高压和低压)片上系统的发展成为可能。然而,寄生后通道晶体管在这些混合电压单芯片系统中是一个关键问题。高压的存在会造成一种情况,在这种情况下,寄生的后通道器件打开并“短路”顶层器件,从而导致系统的功能故障。设计了一种有源衬底驱动器,可自动调整衬底偏置电压到一定水平,确保反向通道器件保持关闭状态。有源衬底驱动器还应有助于补偿由温度、老化和辐照效应引起的后通道晶体管阈值电压的变化。
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