{"title":"Undamped inductive switching of integrated quasi-vertical DMOSFETs","authors":"R. Constapel, M. S. Shekar, R.K. Williams","doi":"10.1109/ISPSD.1996.509485","DOIUrl":null,"url":null,"abstract":"This investigation explores the unclamped inductive switching (UIS) performance and failure mechanisms of 60 V quasi-vertical N-channel DMOSFETs through measurement and numerical device simulation. The non-uniform current distributions that arise inside the DMOS during UIS are analyzed and the effects of local self-heating are investigated.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This investigation explores the unclamped inductive switching (UIS) performance and failure mechanisms of 60 V quasi-vertical N-channel DMOSFETs through measurement and numerical device simulation. The non-uniform current distributions that arise inside the DMOS during UIS are analyzed and the effects of local self-heating are investigated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
