A Bondpad-Size Narrowband LNA for Digital CMOS

J. Borremans, P. Wambacq, G. van der Plas, Y. Rolain, M. Kuijk
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引用次数: 10

Abstract

The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.
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一种带键垫大小的数字CMOS窄带LNA
无线和多标准无线电对高集成度的需求,以及缩小CMOS的昂贵面积,推动了低面积电路解决方案的发展。反馈型无电感lna就是这样一个例子。本文演示了一个仅使用一个堆叠电感的键垫大小的反馈型窄带LNA。3.4 GHz时的增益为20.8 dB,噪声系数为2.2 dB。该解决方案比具有多个电感的经典LNA配置小许多倍,同时获得相似的性能。因此,它是数字CMOS中低区域无线电集成的一个有吸引力的解决方案。
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