Phase conjugation at 10.6 μm via intersubband third order nonlinearities in multi quantum well structures

I. Gravé, M. Segev, A. Yariv
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Abstract

The study of nonlinear optical effects in semiconductor multi quantum well (MQW) subbands and the related applications is a subject of current interest. Greatly enhanced second order nonlinearities, as compared to those in bulk materials, have been observed by different groups. Recently third order nonlinear effects were probed: via the DC Kerr effect(1), where very large enhancement ratios over bulk values were observed, and using a four wave mixing scheme(2) to measure a large χ(3), all in GaAs/AlGaAs superlattices.
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多量子阱结构中基于子带间三阶非线性的10.6 μm相位共轭
半导体多量子阱(MQW)子带中的非线性光学效应及其应用研究是当前研究的热点。不同的研究小组观察到,与块状材料相比,二阶非线性大大增强。最近研究了三阶非线性效应:通过DC Kerr效应(1),观察到体积值上非常大的增强比,并使用四波混合方案(2)来测量大的χ(3),所有这些都在GaAs/AlGaAs超晶格中。
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