Free electron nonlinearities in heavily doped semiconductors plasmonics

F. De Luca, M. Ortolani, C. Ciracì
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引用次数: 7

Abstract

Heavily doped semiconductors have emerged as tunable low-loss plasmonic materials at mid-infrared frequencies. In this article we investigate nonlinear optical phenomena associated with high concentration of free electrons. We use a hydrodynamic description to study free electron dynamics in heavily doped semiconductors up to third-order terms, which are usually negligible for noble metals. We find that cascaded third-harmonic generation due to second-harmonic signals can be as strong as direct third-harmonic generation contributions even when the second-harmonic generation efficiency is zero. Moreover, we show that when coupled with plasmonic enhancement free electron nonlinearities could be up to two orders of magnitude larger than conventional semiconductor nonlinearities. Our study might open a new route for nonlinear optical integrated devices at mid-infrared frequencies.
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重掺杂半导体等离子体中的自由电子非线性
重掺杂半导体已成为中红外频率的可调谐低损耗等离子体材料。在本文中,我们研究了与高浓度自由电子有关的非线性光学现象。我们使用流体力学描述来研究重掺杂半导体中三阶项的自由电子动力学,这对于贵金属来说通常是可以忽略不计的。我们发现,即使在二次谐波产生效率为零的情况下,由二次谐波信号引起的级联三谐波产生也可以与直接三谐波产生的贡献一样强。此外,我们表明,当与等离子体增强耦合时,自由电子的非线性可以比传统的半导体非线性大两个数量级。本研究为中红外非线性光学集成器件的研究开辟了一条新的途径。
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