Magnetic field orientation dependence of the terahertz radiation from GaAs/AlGaAs modulation-doped structures with varying AlGaAs spacer-layer thickness
E. Estacio, C. Ponseca, A. Quema, G. Diwa, H. Murukami, S. Ono, A. Somintac, Michelle Bailon, A. Salvador, Nobuhiko Sarukura
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引用次数: 0
Abstract
The magnetic field orientation dependence of the terahertz radiation intensity from GaAs/AlGaAs modulation-doped structures with varying spacer thickness was investigated. Results are analyzed in the context of junction electric field, carrier mobility, and interface roughness.
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