{"title":"A novel low-voltage switched load CMOS active mixer","authors":"Shen Dan","doi":"10.1109/RFIT.2005.1598903","DOIUrl":null,"url":null,"abstract":"A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2005.1598903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A novel CMOS active mixer topology that can operate at low voltages (e.g. 1 v) is presented in this paper. By switching the load on or off other than switching the current, the switches require no voltage headroom. Because the switches are capacitively connected to the load, the switch can operate under full swing allowed by the supply voltage and contribute no thermal noise. The mixer is designed in 0.18 um CMOS technology, and the simulation results at 1 V supply voltage are satisfactory (gain=7 dB, IP3=7 dBm, NF-11 dB).
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一种新型低压开关负载CMOS有源混频器
本文提出了一种新颖的CMOS有源混频器拓扑结构,可以在低电压(例如1 v)下工作。通过打开或关闭负载而不是切换电流,开关不需要电压余量。由于开关电容连接到负载,开关可以在电源电压允许的全摆幅下工作,并且不会产生热噪声。该混频器采用0.18 um CMOS技术设计,在1 V电源电压下仿真结果令人满意(增益=7 dB, IP3=7 dBm, NF-11 dB)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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