{"title":"Pulse sharpening and RF generation using nonlinear transmission lines","authors":"L. P. Silva Neto, J. O. Rossi, J. Barroso","doi":"10.1109/IMOC.2015.7369106","DOIUrl":null,"url":null,"abstract":"A nonlinear lumped element transmission line (NLETL) with linear inductors and using capacitors as nonlinear elements was built to operate as a high voltage pulse sharpener. NLETLS are suitable for use in fast sampling pulse generation circuits and in the formation of high-voltage solitons, among other applications. In this paper, a NLETL built with 30 sections was tested up to 500 V providing a pulse rise reduction of 700 ns for an input rise time of about 2.5 μs on a 70 ohms resistive load when using a 1.2 kV IGBT solid state switch. Comparison of experimental results with Spice simulation from equivalent NLTL circuit modeling has shown good agreement.","PeriodicalId":431462,"journal":{"name":"2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMOC.2015.7369106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A nonlinear lumped element transmission line (NLETL) with linear inductors and using capacitors as nonlinear elements was built to operate as a high voltage pulse sharpener. NLETLS are suitable for use in fast sampling pulse generation circuits and in the formation of high-voltage solitons, among other applications. In this paper, a NLETL built with 30 sections was tested up to 500 V providing a pulse rise reduction of 700 ns for an input rise time of about 2.5 μs on a 70 ohms resistive load when using a 1.2 kV IGBT solid state switch. Comparison of experimental results with Spice simulation from equivalent NLTL circuit modeling has shown good agreement.
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