A 190 GHz Inset-Fed Patch Antenna in SiGe BEOL for On-Chip Integration

M. V. Thayyil, P. V. Testa, C. Carta, F. Ellinger
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Abstract

This paper presents the design and characterization of an integrated rectangular patch antenna implemented in the back end of line (BEOL) of a 130 nm silicon germanium (SiGe) technology. The inset-fed antenna has a patch area of 0.19 mm2. To the knowledge of the authors, this is one of the smallest radiating element areas reported in literature for on-chip antennas at comparable frequencies. Electromagnetic simulations show a maximum antenna gain of 2.6 dBi and a directivity of 9.3 dBi. The measured resonance frequency of 192.3 GHz is in agreement with post-layout simulation results. Design challenges including impact of density fillers in integrated technologies are also discussed.
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一种用于片上集成的190ghz嵌入式馈电贴片天线
本文介绍了一种集成矩形贴片天线的设计和特性,该天线采用130 nm硅锗(SiGe)技术实现后端线(BEOL)。插入馈电天线的贴片面积为0.19 mm2。据作者所知,这是文献报道的片上天线在类似频率下最小的辐射元件区域之一。电磁仿真结果表明,该天线的最大增益为2.6 dBi,指向性为9.3 dBi。实测谐振频率为192.3 GHz,与布局后仿真结果吻合。设计挑战,包括密度填料在集成技术的影响也进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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