{"title":"Laser annealing of semiconductors","authors":"M. Bertolotti","doi":"10.1117/12.959053","DOIUrl":null,"url":null,"abstract":"ConclusionsThe previous exposition should allow one to understand the basic mechanisms involved in laser annealing. Many aspects of it have not been treated due to lack of space, e. g., the defects associated with the laser irradiation and the technological implication of the method, which may be found in recent literature [64].","PeriodicalId":118885,"journal":{"name":"Journal of Soviet Laser Research","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Soviet Laser Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.959053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
ConclusionsThe previous exposition should allow one to understand the basic mechanisms involved in laser annealing. Many aspects of it have not been treated due to lack of space, e. g., the defects associated with the laser irradiation and the technological implication of the method, which may be found in recent literature [64].
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