Dielectric characteristic of fatigued Bi4-xLaxTi3O12 ferroelectric films

N. Zhong, T. Shoisaki
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Abstract

Dielectric measurement was carried out on fatigued Bi4-xLaxTi3O12 ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi4-xLaxTi3O12 films with high concentration of La. Dielectric permittivity was also measured on Bi4-xLaxTi3O12 ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.
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疲劳Bi4-xLaxTi3O12铁电薄膜的介电特性
对疲劳的Bi4-xLaxTi3O12铁电薄膜进行了介电测量。发现介电常数随开关周期的变化而变化。随着开关周期的增加,介电常数呈连续下降趋势。对于La浓度较低的BiT薄膜,这种下降较为明显,而对于La浓度较高的Bi4-xLaxTi3O12薄膜,这种下降较为轻微。测量了Bi4-xLaxTi3O12铁电薄膜在不同频率(50 kHz和20 kHz)下的介电常数。结果表明,薄膜在低频疲劳时介电常数下降明显,而在高频疲劳时介电常数下降轻微。提出了疲劳过程中界面层的生长。
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