Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si

R. Takigawa, E. Higurashi, T. Asano
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引用次数: 1

Abstract

Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.
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硅上LNOI对LiNbO3和SiO2/Si表面活化键合的影响
采用表面激活键合的方法,在硅上实现了LiNbO3-on- insulator (LNOI)的晶圆级键合。
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