Analog modulation performance of red (670 nm) oxide confined VCSELs

C. Carlsson, H. Martinsson, J. Vukusic, J. Halonen, A. Larsson
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Abstract

Vertical cavity surface emitting lasers (VCSELs) are attractive for fiber optical distribution of RF-signals in cost sensitive applications such as intra-building antenna remoting in wireless networks. VCSELs emitting at 850 nm, together with low modal dispersion multimode fibers, are expected to provide adequate performance for such applications over distances of the order of 100 meters. VCSELs emitting at 650 nm, together with graded index plastic optical fiber (POF), may offer the ultimate low cost solution for shorter distance transmission of the analog signals. For this purpose we have fabricated GaAs-based oxide confined VCSELs with an InGaP/InGaAlP MQW active region for emission at 670 nm and characterized their analog modulation properties in the frequency range 0.1-3 GHz using two-tone measurements.
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红色(670 nm)氧化物受限VCSELs的模拟调制性能
垂直腔面发射激光器(VCSELs)在成本敏感型应用(如无线网络中的建筑物内天线远程传输)中具有广泛的应用前景。发射波长为850nm的vcsel,加上低模态色散多模光纤,有望在100米量级的距离上为此类应用提供足够的性能。在650 nm发射的vcsel,与渐变折射率塑料光纤(POF)一起,可能为模拟信号的短距离传输提供最终的低成本解决方案。为此,我们制作了具有InGaP/InGaAlP MQW有源区的gaas基氧化物约束vcsel,用于670 nm发射,并使用双音测量表征了它们在0.1-3 GHz频率范围内的模拟调制特性。
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