Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance

Abstract

Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.