A comparison of dual material double gate JLFET with single material double gate JLFET

Ajay Kumar, A. Chaudhry, Vijay Kumar, Vishal S Sharma
{"title":"A comparison of dual material double gate JLFET with single material double gate JLFET","authors":"Ajay Kumar, A. Chaudhry, Vijay Kumar, Vishal S Sharma","doi":"10.1109/NGCT.2016.7877397","DOIUrl":null,"url":null,"abstract":"This paper presents a comparative study of dual material double gate junctionless transistor with the single material double gate junctionless transistor. A review of the basic modelling of the Junctionless transistor is also given in the paper. The surface potential of both structures are compared. The threshold voltage compared for both the devices shows that the single material gate has higher threshold voltage.","PeriodicalId":326018,"journal":{"name":"2016 2nd International Conference on Next Generation Computing Technologies (NGCT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 2nd International Conference on Next Generation Computing Technologies (NGCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NGCT.2016.7877397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper presents a comparative study of dual material double gate junctionless transistor with the single material double gate junctionless transistor. A review of the basic modelling of the Junctionless transistor is also given in the paper. The surface potential of both structures are compared. The threshold voltage compared for both the devices shows that the single material gate has higher threshold voltage.
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双材料双栅JLFET与单材料双栅JLFET之比较
本文对双材料双栅无结晶体管与单材料双栅无结晶体管进行了比较研究。本文还对无结晶体管的基本模型进行了综述。比较了两种结构的表面电位。两种器件的阈值电压比较表明,单材料栅极具有更高的阈值电压。
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