All-optical inverted triode based on cross-gain modulation using InAs quantum dot semiconductor optical amplifiers

Y. Maeda, S. Maki, Y. Kuroki, H. Nakayama, J. Huh
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Abstract

We designed active layer of 15 stacks of InAs quantum dots, AIGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical inverted triode. Our results demonstrate input, control and output waveforms, and input-output characteristics of the optical triode. It was obtained high speed response time at higher bit rate of 40 Gbps.
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基于InAs量子点半导体光放大器交叉增益调制的全光倒三极管
我们设计了由15层InAs量子点组成的有源层,AIGaAs/GaAs双异质结构,并制作了用于光学倒三极管的qd - soa。我们的结果展示了输入、控制和输出波形,以及光三极管的输入输出特性。在40 Gbps的高比特率下获得了高速响应时间。
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