S. Dow, B. Ballweber, L. Chou, D. Eickbusch, J. Irwin, G. Kurtzman, P. Manapragada, D. Moeller, J. Paramesh, G. Black, R. Wollscheid, K. Johnson
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引用次数: 27
Abstract
This transceiver IC, fabricated in SiGe:C BiCMOS, contains dual LNAs, dual quadrature mixers, baseband filtering, RX and TX VCOs, and transmit buffers. The IC has GSM band performance of 67.5 dB gain, 2.3 dB NF, +49 dBm IIP2, -9 dBm IIP3 50 dB image rejection, and TX noise <-162 dBc/Hz at 20 MHz. This IC is part of a highly integrated low cost, GSM/GPRS platform that consists of five separate ICs.
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