J. R. Thorpe, J. R. Fletcher, J. M. Chamberlain, R. Miles, J. García-García, C. Mann, E. Huq, M. Oldfield, J. Spencer
{"title":"Development of a submillimeter wave reflex klystron","authors":"J. R. Thorpe, J. R. Fletcher, J. M. Chamberlain, R. Miles, J. García-García, C. Mann, E. Huq, M. Oldfield, J. Spencer","doi":"10.1109/THZ.2002.1037605","DOIUrl":null,"url":null,"abstract":"The development of a micromachined submillimeter wave reflex klystron structure is described. An outline analysis is given of the key theoretical issues, such as oscillation and starting conditions, and how the output power scales with frequency. Two techniques for the realisation of the cavity assembly are outlined. The preferred method results in a free-standing gold re-entrant cavity of high surface quality. Field emitter tips are planned for use in this device: the present status of performance of these is described.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THZ.2002.1037605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The development of a micromachined submillimeter wave reflex klystron structure is described. An outline analysis is given of the key theoretical issues, such as oscillation and starting conditions, and how the output power scales with frequency. Two techniques for the realisation of the cavity assembly are outlined. The preferred method results in a free-standing gold re-entrant cavity of high surface quality. Field emitter tips are planned for use in this device: the present status of performance of these is described.
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