Simulation framework for GaN devices with special mention to reliability concern

VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects Pub Date : 2019-09-27 DOI:10.1049/pbcs073g_ch4

Sushanta Bordoloi, Ashok Ray, G. Trivedi

引用次数: 0

Abstract

In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.

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GaN器件的仿真框架，特别提到了可靠性问题

在本章中，我们将在前几节中研究一些可靠性问题，并最终提出一个模拟(数值)框架以及模型开发来理解这些影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects

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