V. Malyutina-Bronskaya, V. Zalesski, T. R. Leonova, A. Mudryi
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Abstract
Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive ion-plasma sputtering. It is shown, that the influence of annealing of ZnO:Er films on visual luminescence takes place.
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