A W-band Fundamental Mixer MMIC Using Planar Schottky Diode

F. Meng, Yan Chen, Yuan Fang
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Abstract

Based on planar Schottky diode process, a single balanced mixer MMIC is presented with the Schottky diodes and passive elements integrated on one chip. The mixer has a three line coupled Marchand balun to combine the RF and LO signals. A conversion loss as low as 4.65dB@79GHz is obtained with the LO power of 13dBm in down-conversion mode with the IF fixed at 1GHz. The mixer chip exhibits an IF bandwidth of more than 30GHz at an RF frequency of 75GHz to 100GHz with a LO signal of 70GHz. The final size of the chip is only 1.00mm × 1.20mm.
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基于平面肖特基二极管的w波段基频混频器MMIC
基于平面肖特基二极管工艺,提出了一种将肖特基二极管和无源元件集成在一个芯片上的单平衡混频器MMIC。混频器有一个三线耦合的马尔尚平衡器来组合RF和LO信号。在中频固定为1GHz的下变频模式下,本端功率为13dBm,转换损耗低至4.65dB@79GHz。该混频器芯片在75GHz至100GHz的射频频率下具有30GHz以上的中频带宽,LO信号为70GHz。芯片的最终尺寸仅为1.00mm × 1.20mm。
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