{"title":"Emission of electrons from form MIM structure Mo-SiO/sub 2/-Al with a layer of polypropylene","authors":"T. Pavel, S. Juriy, G. Serge","doi":"10.1109/IVNC.2005.1619548","DOIUrl":null,"url":null,"abstract":"The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Vacuum Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2005.1619548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The structures of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.
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