Circuit Design and FM Noise Characteristics of 20/30 GHz GaAs MESFET Multiplier Chains

T. Shima, T. Takano, T. Katoh, H. Sugawara, H. Komizo
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Abstract

Multiplier chains for 20/30 GHz bands were developed using two-stage GaAs MESFET doublers. They provide 11 dBm output power with 4 dB gain at 18 GHz and 4 dBm output power with 5 dB loss at 30 GHz. Circuit design and FM noise characteristics will also be described.
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20/30 GHz GaAs MESFET倍频链电路设计及调频噪声特性
使用两级GaAs MESFET倍频器开发了20/30 GHz频段的倍频链。它们在18 GHz时提供11dbm输出功率和4db增益,在30 GHz时提供4dbm输出功率和5db损耗。电路设计和调频噪声特性也将被描述。
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