Total dose effects in the auger transistor

D. V. Gromov, V. Elesin, A. Nikiforov, S. Polevich, Y. Adamov, V. Mokerov
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Abstract

The total dose effects in the Auger Tunnel Emitter Transistor (Auger TETRAN) have been experimentally investigated. It was established, that DC characteristic i.e. the collector current and the current gain coefficient are sufficiently degraded under (gamma) -rays irradiation over 5.106 rad(Si). An unusual non-monotonous behavior of the DC characteristic was also observed at a low collector voltage.
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螺旋晶体管的总剂量效应
对俄歇隧道发射极晶体管(俄歇TETRAN)中的总剂量效应进行了实验研究。结果表明,在5.106 rad(Si)以上的γ射线照射下,集电极的直流特性(即集电极电流和电流增益系数)得到了充分的降低。在低集电极电压下,还观察到直流特性的不寻常的非单调行为。
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