Status of the BELLE II Pixel Detector

Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022) Pub Date : 2023-03-13 DOI:10.22323/1.420.0005

G. Giakoustidis, F. Abudinén, K. Ackermann, P. Ahlburg, M. Albalawi, O. Alonso, L. Andricek, R. Ayad, Varghese Babu, Anselm Baur, F. Bernlochner, T. Bilka, A. Bolz, A. Bozek, C. Camien, A. C. Caldwell, L. Cao, V. Chekelian, Á. Diéguez, J. Dingfelder, Z. Doležal, M. Fras, A. Frey, M. Gabriel, K. Gadow, T. Gessler, D. Getzkow, L. L. Gioi, D. Greenwald, M. Heck, M. Hensel, M. Hoek, Stefan Huber, J. Kandra, P. Kapusta, R. Karl, Jasper Kehl, C. Kiesling, B. Kisielewski, D. Kittlinger, D. Klose, P. Kodyš, C. Koffmane, I. Konorov, Matthäus Krein, S. Krivokuca, T. Kuhr, S. Kurz, P. Kvasnička, J. S. Lange, K. Lautenbach, U. Leis, P. Leitl, D. Levit, G. Liemann, Qingyuan Liu, Zhen’An Liu, T. Lück, C. Marinas, S. Mccarney, H. Moser, D. Moya, F. Müller, F. Müller, C. Niebuhr, J. Ninkovic, B. Paschen, S. Paul, I. Perić, D. Pitzl, A. Rabusov, Markus Reif, S. Reiter, Rainer Richter, M. Ritter, M. Ritzert, J. Sanchez, B. Scavino, G. Schaller, J. Schmitz, M. Schnecke, F. Schopper, H. Schreeck, B. Schwenker, M. Schwickardi

{"title":"Status of the BELLE II Pixel Detector","authors":"G. Giakoustidis, F. Abudinén, K. Ackermann, P. Ahlburg, M. Albalawi, O. Alonso, L. Andricek, R. Ayad, Varghese Babu, Anselm Baur, F. Bernlochner, T. Bilka, A. Bolz, A. Bozek, C. Camien, A. C. Caldwell, L. Cao, V. Chekelian, Á. Diéguez, J. Dingfelder, Z. Doležal, M. Fras, A. Frey, M. Gabriel, K. Gadow, T. Gessler, D. Getzkow, L. L. Gioi, D. Greenwald, M. Heck, M. Hensel, M. Hoek, Stefan Huber, J. Kandra, P. Kapusta, R. Karl, Jasper Kehl, C. Kiesling, B. Kisielewski, D. Kittlinger, D. Klose, P. Kodyš, C. Koffmane, I. Konorov, Matthäus Krein, S. Krivokuca, T. Kuhr, S. Kurz, P. Kvasnička, J. S. Lange, K. Lautenbach, U. Leis, P. Leitl, D. Levit, G. Liemann, Qingyuan Liu, Zhen’An Liu, T. Lück, C. Marinas, S. Mccarney, H. Moser, D. Moya, F. Müller, F. Müller, C. Niebuhr, J. Ninkovic, B. Paschen, S. Paul, I. Perić, D. Pitzl, A. Rabusov, Markus Reif, S. Reiter, Rainer Richter, M. Ritter, M. Ritzert, J. Sanchez, B. Scavino, G. Schaller, J. Schmitz, M. Schnecke, F. Schopper, H. Schreeck, B. Schwenker, M. Schwickardi","doi":"10.22323/1.420.0005","DOIUrl":null,"url":null,"abstract":"The Belle II experiment at the Super KEK B-factory (SuperKEKB) in Tsukuba, Japan, has been collecting 𝑒 + 𝑒 − collision data since March 2019. Operating at a record-breaking luminosity of up to 4 . 7 × 10 34 cm − 2 s − 1 , data corresponding to 424 fb − 1 has since been recorded. The Belle II Vertex Detector (VXD) is central to the Belle II detector and its physics program and plays a crucial role in reconstructing precise primary and decay vertices. It consists of the outer four-layer Silicon Vertex Detector (SVD) using double-sided silicon strips and the inner two-layer PiXel Detector (PXD) based on the Depleted P-channel Field Effect Transistor (DePFET) technology. The PXD DePFET structure combines signal generation and amplification within the pixels with a minimum pitch of ( 50 × 55 ) µ m 2 . A high gain and a high Signal-to-Noise Ratio (SNR) allow thinning the pixels to 75 µ m while retaining a high pixel hit efficiency of about 99 % for the Belle II","PeriodicalId":275608,"journal":{"name":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.420.0005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

The Belle II experiment at the Super KEK B-factory (SuperKEKB) in Tsukuba, Japan, has been collecting 𝑒 + 𝑒 − collision data since March 2019. Operating at a record-breaking luminosity of up to 4 . 7 × 10 34 cm − 2 s − 1 , data corresponding to 424 fb − 1 has since been recorded. The Belle II Vertex Detector (VXD) is central to the Belle II detector and its physics program and plays a crucial role in reconstructing precise primary and decay vertices. It consists of the outer four-layer Silicon Vertex Detector (SVD) using double-sided silicon strips and the inner two-layer PiXel Detector (PXD) based on the Depleted P-channel Field Effect Transistor (DePFET) technology. The PXD DePFET structure combines signal generation and amplification within the pixels with a minimum pitch of ( 50 × 55 ) µ m 2 . A high gain and a high Signal-to-Noise Ratio (SNR) allow thinning the pixels to 75 µ m while retaining a high pixel hit efficiency of about 99 % for the Belle II

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BELLE II像素检测器的状态

自2019年3月以来，位于日本筑波的超级KEK b工厂(SuperKEKB)的Belle II实验一直在收集𝑒+𝑒−碰撞数据。工作在破纪录的亮度高达4。7 × 10 34 cm−2 s−1，对应于424 fb−1的数据已被记录。Belle II顶点探测器(VXD)是Belle II探测器及其物理程序的核心，在重建精确的主顶点和衰变顶点方面起着至关重要的作用。它由外部采用双面硅条的四层硅顶点检测器(SVD)和内部采用耗尽p沟道场效应晶体管(DePFET)技术的两层像素检测器(PXD)组成。PXD DePFET结构结合了像素内的信号生成和放大，最小间距为(50 × 55)µm 2。高增益和高信噪比(SNR)允许将像素细化到75 μ m，同时保持约99%的高像素命中效率

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Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)

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