P. Ning, Tianshu Yuan, Han Cao, Lei Li, Yuhui Kang
{"title":"The development of 1200 V SiC Hybrid Switched power modules","authors":"P. Ning, Tianshu Yuan, Han Cao, Lei Li, Yuhui Kang","doi":"10.1109/IWIPP.2019.8799083","DOIUrl":null,"url":null,"abstract":"In this paper, three hybrid switch (HyS) module consisting of the paralleled Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) are developed. From the double pulse evaluation results, they are promising for fast switching and low price. The fabricated 1200 V/200 A hybrid module was used for a motor drive, and it was tested to 30 kW, 30 kHz.","PeriodicalId":150849,"journal":{"name":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"156 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWIPP.2019.8799083","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, three hybrid switch (HyS) module consisting of the paralleled Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) are developed. From the double pulse evaluation results, they are promising for fast switching and low price. The fabricated 1200 V/200 A hybrid module was used for a motor drive, and it was tested to 30 kW, 30 kHz.
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