Mao Jingwen, Chen Tingqian, Chen Cheng, R. Junyan, Yang Li
{"title":"CMOS 1.5V bandgap voltage reference","authors":"Mao Jingwen, Chen Tingqian, Chen Cheng, R. Junyan, Yang Li","doi":"10.1109/ICASIC.2005.1611359","DOIUrl":null,"url":null,"abstract":"A low power and high precision CMOS bandgap voltage reference circuit is presented. Prototype of the circuit is fabricated using the 0.18 mum CMOS process. The power supply is only 1.5 V. It fulfills the first order PTAT (proportion to absolute temperature) temperature curvature compensation with a good PSRR (power supply rejection ratio). The measured results of this circuit show that the PSRR is 47 dB. The output voltage varies from 1.114 V to 1.117 V which is constant within 0.269% over the temperature range of 0~80 degC. The power dissipation is 0.22 mW at 1.5 V and the active area is 0.057 mm2","PeriodicalId":431034,"journal":{"name":"2005 6th International Conference on ASIC","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 6th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2005.1611359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A low power and high precision CMOS bandgap voltage reference circuit is presented. Prototype of the circuit is fabricated using the 0.18 mum CMOS process. The power supply is only 1.5 V. It fulfills the first order PTAT (proportion to absolute temperature) temperature curvature compensation with a good PSRR (power supply rejection ratio). The measured results of this circuit show that the PSRR is 47 dB. The output voltage varies from 1.114 V to 1.117 V which is constant within 0.269% over the temperature range of 0~80 degC. The power dissipation is 0.22 mW at 1.5 V and the active area is 0.057 mm2
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