A 0.5-6 GHz Improved Linearity, Resistive Feedback 90-nm CMOS LNA

B. Perumana, J. Zhan, S. S. Taylor, J. Laskar
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引用次数: 24

Abstract

This paper presents a resistive feedback broadband LNA in 90 nm CMOS which occupies 50 mum times 270 mum of active area. The LNA has 7 GHz 3 dB bandwidth and >24 dB voltage gain. Across 0.5-6 GHz, its input matching is better than -10 dB, noise figure below 2.5 dB, and iIP3 better than -8 dBm. Techniques to improve linearity in resistive feedback LNAs are discussed in detail. The LNA also provides an additional low power mode operation.
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一种0.5-6 GHz改进线性度、阻性反馈的90纳米CMOS LNA
本文提出了一种90 nm CMOS电阻式反馈宽带LNA,其有源面积为50 μ m × 270 μ m。LNA具有7 GHz 3db带宽和> 24db电压增益。在0.5-6 GHz范围内,其输入匹配优于-10 dB,噪声系数低于2.5 dB, iIP3优于-8 dBm。详细讨论了提高阻性反馈lna线性度的技术。LNA还提供额外的低功耗模式操作。
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