V. Achanta, H. Yoshida, T. Mozume, T. Simoyama, H. Ishikawa
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引用次数: 2
Abstract
We optimized a cTQW structure for both switching energy and response time using InGaAs/AlAs/AlAsSb material system. In such a structure, we expect switching energy to be in the range of a few 100s to a few 10s of fJ (few 10s of nW) depending on the growth optimization. We estimated the LO-phonon assisted relaxation time to be about 500 fsec (switching speeds exceeding 1THz) with multi-wavelength applicability. This low energy and high speed QW structure is ideal for realizing highly efficient gate switch for futuristic all-optical communication networks with bit rates exceeding few 100 Gb/s.
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