{"title":"Model of plasma chemical etching of Si in CCl2F2/O2 plasma","authors":"B. Bogomolov","doi":"10.1109/IFOST.2012.6357579","DOIUrl":null,"url":null,"abstract":"The basic results of plasma etching of silicon in CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.","PeriodicalId":319762,"journal":{"name":"2012 7th International Forum on Strategic Technology (IFOST)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th International Forum on Strategic Technology (IFOST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFOST.2012.6357579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.
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